| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
503 pcs
|
503 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI4378DY-T1-GE3 is an N-Channel MOSFET designed for high-density power applications. It features a 20V drain-source voltage and a continuous drain current of 19A at 25°C ambient temperature.
This MOSFET utilizes TrenchFET Gen II Power MOSFET Technology, offering ultra-low on-resistance with a maximum of 2.7mOhm at 25A and 4.5V Vgs. Key electrical characteristics include a gate threshold voltage of 1.8V maximum at 250µA and an input capacitance of 8500 pF at 10V.
The device operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 1.6W at 25°C ambient. It is housed in an 8-SOIC package suitable for surface mounting.
Applications include synchronous rectification and point-of-load power supplies. The Si4378DY-T1-GE3 variant is lead (Pb)-free and halogen-free.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
20V.
19A.
2.7mOhm maximum at 25A, 4.5V.
1.8V maximum at 250µA.
1.6W.
-55°C to 150°C.
8-SOIC surface mount.