SI4378DY-T1-E3 The Vishay Dale SI4378DY-T1-E3 is an N-Channel MOSFET with a 20V drain-source voltage and 19A continuous current rating. It features low on-resistance and is available in an 8-SOIC package.
Mfr Part #:

SI4378DY-T1-E3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI4378DY-T1-E3 is an N-Channel MOSFET with a 20V drain-source voltage and 19A continuous current rating. It features low on-resistance and is available in an 8-SOIC package.
✓ Total Stock: 13 pcs
$ Price Range: $0.99

SI4378DY-T1-E3 Available from 1 distributor

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SI4378DY-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI4378DY-T1-E3 Description

Short technical summary and product information.

The Vishay Dale SI4378DY-T1-E3 is an N-Channel MOSFET designed for high-performance applications. It offers a drain-source voltage (Vds) of 20V and a continuous drain current (Id) of 19A at 25°C ambient temperature.

 

Key electrical characteristics include a low drain-source on-resistance (Rds On) of 2.7mOhm at a gate-source voltage (Vgs) of 4.5V and a drain current (Id) of 25A. The gate threshold voltage (Vgs(th)) is a maximum of 1.8V at 250µA. Input capacitance (Ciss) is 8500 pF at 10V, and total gate charge (Qg) is 55 nC at 4.5V.

 

This MOSFET operates within a temperature range of -55°C to 150°C (TJ). It is housed in an 8-SOIC surface mount package, measuring 0.154 inches (3.90mm) in width. The device is suitable for applications such as synchronous rectification and point-of-load power supplies.

SI4378DY-T1-E3 Quick Information

Product Type: MOSFET
Series: SI4378DY-T1-E3
Canonical Name: N-Channel 20V MOSFET
Subcategory: N-Channel

SI4378DY-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead (Pb)-free

SI4378DY-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI4378DY-T1-E3 Features

  • N-Channel 20V MOSFET
  • Low Rds On: 2.7mOhm @ 25A, 4.5V
  • High continuous current: 19A
  • Low gate charge: 55 nC
  • 8-SOIC surface mount package

SI4378DY-T1-E3 Applications

  • Suitable for synchronous rectification circuits.
  • Ideal for point-of-load power regulation.
  • Used in low-voltage high-current switching applications.
  • Applicable in compact surface-mount power modules.

SI4378DY-T1-E3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the SI4378DY-T1-E3?

The maximum drain-source voltage (Vds) for the SI4378DY-T1-E3 is 20V.

What is the continuous drain current rating?

The continuous drain current (Id) rating is 19A at 25°C ambient temperature.

What is the on-resistance of the SI4378DY-T1-E3?

The maximum on-resistance (Rds On) is 2.7mOhm at a drain current of 25A and gate-source voltage of 4.5V.

What is the operating temperature range?

The operating junction and storage temperature range is -55°C to 150°C.

What package type is the SI4378DY-T1-E3 supplied in?

The SI4378DY-T1-E3 is supplied in an 8-SOIC package.

Is the SI4378DY-T1-E3 RoHS compliant?

Yes, the RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for this part?

The Moisture Sensitivity Level (MSL) is 1.

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