| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
32,400 pcs
|
32400 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
6,020 pcs
|
6020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Siliconix SI4368DY-T1-E3 is an N-Channel MOSFET featuring TrenchFET Gen II technology for improved switching performance. It is rated for a drain-source voltage of 30V and can handle a continuous drain current of 17A at 25°C.
This MOSFET exhibits a low on-state resistance of 3.2mOhm at 25A and 10V gate drive, contributing to reduced conduction losses. Its gate charge is a maximum of 80nC at 4.5V gate-source voltage, and the gate threshold voltage is typically 1.8V at 250µA.
The device operates over a wide temperature range of -55°C to 150°C. It comes in an 8-SOIC package suitable for surface mounting, with dimensions of 0.154" (3.90mm) width.
Applications include low-side DC/DC conversion in notebooks, servers, and VRM modules, as well as fixed telecom power supplies. The MOSFET is designed for fast switching and reduced switching losses.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vds) is 30V.
The maximum continuous drain current (Id) at 25°C is 17A.
The maximum on-state resistance (Rds On) is 3.2mOhm at a gate-source voltage of 10V and a drain current of 25A.
The operating junction temperature range is -55°C to 150°C.
It is supplied in an 8-SOIC package.