| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
155 pcs
|
155 pcs | On Request | 1 | On Request | On Request | 06+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI4362BDY-T1-E3 is a high-performance N-Channel MOSFET from the TrenchFET series. It features a maximum drain-to-source voltage (Vdss) of 30V and a continuous drain current (Id) of 29A at case temperature.
This MOSFET offers a low on-resistance (Rds On) of 4.6mOhm at 19.8A and 10V gate-source voltage, ensuring efficient power handling. The gate charge (Qg) is 115nC at 10V, and the input capacitance (Ciss) is 4800pF at 15V.
Designed for surface mounting, the SI4362BDY-T1-E3 comes in an 8-SOIC package. It operates within a temperature range of -55°C to 150°C (TJ). The maximum power dissipation is 3W at ambient temperature and 6.6W at case temperature.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 30V.
It is offered in an 8-SOIC (0.154", 3.90mm Width) surface mount package.
The junction operating temperature range is -55°C to 150°C.
Maximum continuous drain current (Id) is 29A at case temperature (Tc).
The typical on-resistance is 4.6mOhm at Vgs=10V and Id=19.8A.
The maximum gate threshold voltage (Vgs(th)) is 2V at a drain current of 250µA.
The maximum gate-source voltage (Vgs) rating is ±12V.