| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
370 pcs
|
370 pcs | On Request | 1 | On Request | On Request | 2014+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay SI4346DY-T1-GE3 is an N-Channel Power MOSFET designed for high-side DC/DC conversion applications in notebooks, desktops, and servers. It features a 30V drain-source voltage (Vds) and a continuous drain current (Id) of 5.9A at 25°C ambient temperature.
This MOSFET offers a low on-state resistance (Rds On) of 23mOhm at a gate-source voltage (Vgs) of 10V and a drain current of 8A. The gate threshold voltage (Vgs(th)) is 2V at 250µA. It operates within a temperature range of -55°C to 150°C (TJ).
The device is housed in an 8-SOIC package with surface mount capability. It also features a maximum power dissipation of 1.31W at 25°C ambient temperature and a junction-to-ambient thermal resistance of 50°C/W.
Key electrical characteristics include a gate charge (Qg) of 10 nC at 4.5V Vgs and a gate-source voltage limit of ±12V. The component is RoHS3 compliant and halogen-free.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
8-SOIC (0.154", 3.90mm Width) surface mount package.
-55°C to 150°C (junction temperature).
23mΩ maximum at 8A and 10V gate drive.
6.5nC typical at VDS=15V, VGS=4.5V, ID=8A.
1.31W at 25°C ambient temperature.
2V maximum at VDS=VGS, ID=250µA.