| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
120,533 pcs
|
120533 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay SI4324DY-T1-E3 is an N-Channel MOSFET belonging to the Metal Oxide Semiconductor technology family. It is designed for applications requiring robust power handling, with a maximum drain-source voltage (Vdss) of 30V and a continuous drain current capability of 36A at the case temperature.
Key electrical characteristics include a low maximum on-resistance (Rds On) of 3.2mOhm at 20A and 10V Vgs, and a gate threshold voltage (Vgs(th)) of 2.5V at 250µA. The gate charge (Qg) is rated at a maximum of 85nC at 10V Vgs. The device operates within a wide temperature range of -55°C to 150°C (TJ).
This MOSFET is supplied in a surface mountable 8-SOIC package, measuring 0.154 inches (3.90mm) in width. Its power dissipation is rated at 3.5W (Ta) and 7.8W (Tc), making it suitable for various power conversion and management tasks where thermal efficiency is important.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
36A at case temperature.
3.2mOhm maximum at Vgs=10V, Id=20A.
85nC at Vgs=10V.
-55°C to 150°C junction temperature.
8-SOIC (0.154", 3.90mm Width) surface mount package.
2.5V maximum at Id=250µA.