| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,040 pcs
|
5040 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
5 pcs
|
5 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The SI4288DY-T1-GE3 is a dual N-channel MOSFET from Vishay Dale, designed for switching and power management applications. It is housed in an 8SO surface-mount package, suitable for compact circuit designs.
Key electrical specifications include a drain-source voltage (Vdss) of 40V, a gate-source voltage rating of ±20V, and a continuous drain current of 9.2A at TC=25°C (derated to 7.4A at TC=70°C). The device can handle pulsed drain currents up to 50A and features a single-pulse avalanche energy rating of 5mJ. Maximum power dissipation is 3.1W at TC=25°C.
The operating junction and storage temperature range spans from -55°C to 150°C, making it suitable for a wide range of environments. The MOSFET is optimized for low-voltage, moderate-current switching applications such as DC-DC converters, load switches, and battery management.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
40V.
-55°C to 150°C.