SI4214DDY-T1-GE3 The Vishay Dale SI4214DDY-T1-GE3 is a dual N-channel MOSFET designed for notebook system power and low current DC/DC applications. It features a 30V drain-source voltage and 8.5A continuous drain current.
Mfr Part #:

SI4214DDY-T1-GE3

Available from 3 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI4214DDY-T1-GE3 is a dual N-channel MOSFET designed for notebook system power and low current DC/DC applications. It features a 30V drain-source voltage and 8.5A continuous drain current.
✓ Total Stock: 50,171 pcs
$ Price Range: $0.99

SI4214DDY-T1-GE3 Available from 3 distributors

✓ Authorised
✓ Non-Authorised
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27,500 pcs
27500 pcs On Request 1 On Request On Request 1415+13+ On Request On Request
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21,020 pcs
21020 pcs On Request 1 On Request On Request On Request On Request On Request
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1,651 pcs
1651 pcs On Request 1 On Request On Request On Request On Request On Request

SI4214DDY-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs(th) (Max) @ Id

SI4214DDY-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI4214DDY-T1-GE3 is a dual N-channel power MOSFET from the TrenchFET series. It is rated for a 30V drain-source voltage and offers a low on-resistance of 19.5mOhm at 8A and 10V Vgs.

 

This MOSFET is suitable for applications such as notebook system power and low current DC/DC converters. It features a logic level gate and is available in an 8-SOIC package.

 

Key electrical characteristics include a continuous drain current of 8.5A at 25°C case temperature and a maximum power dissipation of 3.1W at 25°C case temperature. The operating junction and storage temperature range is -55°C to 150°C.

 

The device is surface mounted and designed for efficient power management in compact electronic systems.

SI4214DDY-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: Dual N-Channel 30 V (D-S) MOSFET
Subcategory: N-Channel

SI4214DDY-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI4214DDY-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI4214DDY-T1-GE3 Features

  • Dual N-Channel 30V Power MOSFET
  • Low Rds On: 19.5mOhm at 8A, 10V
  • Logic Level Gate design
  • 8-SOIC surface mount package
  • Suitable for DC/DC applications

SI4214DDY-T1-GE3 Applications

  • Notebook system power management
  • Low current DC/DC converters
  • Power switching applications
  • Battery powered devices

SI4214DDY-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the SI4214DDY-T1-GE3?

The maximum drain-source voltage is 30V.

What is the continuous drain current of the SI4214DDY-T1-GE3?

The continuous drain current is 8.5A at 25°C case temperature.

What is the Rds On for the SI4214DDY-T1-GE3?

The Rds On is a maximum of 19.5mOhm at 8A drain current and 10V gate-source voltage.

What package type is the SI4214DDY-T1-GE3 available in?

The SI4214DDY-T1-GE3 is available in an 8-SOIC package.

What is the operating temperature range for this MOSFET?

The operating junction and storage temperature range is -55°C to 150°C.

Is the SI4214DDY-T1-GE3 RoHS compliant?

The RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the SI4214DDY-T1-GE3?

The Moisture Sensitivity Level is 1.

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