SI4204DY-T1-GE3 Dual N-Channel MOSFET from Vishay Dale with 20V drain-source voltage, 19.8A continuous drain current, and 4.6mΩ on-resistance in an 8-SOIC surface-mount package.
Mfr Part #:

SI4204DY-T1-GE3

Available from 2 distributors
Mfr Name: Vishay
Vishay
Dual N-Channel MOSFET from Vishay Dale with 20V drain-source voltage, 19.8A continuous drain current, and 4.6mΩ on-resistance in an 8-SOIC surface-mount package.
✓ Total Stock: 12,187 pcs
$ Price Range: $0.99

SI4204DY-T1-GE3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
8,520 pcs
8520 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
3,667 pcs
3667 pcs On Request 1 On Request On Request On Request On Request On Request

SI4204DY-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs(th) (Max) @ Id

SI4204DY-T1-GE3 Description

Short technical summary and product information.

The SI4204DY-T1-GE3 is a dual N-Channel enhancement-mode MOSFET from Vishay Dale, designed for low-voltage power switching applications. It features a maximum drain-to-source voltage of 20V and a continuous drain current rating of 19.8A at a case temperature of 25°C. The device offers a low on-resistance of 4.6mΩ maximum at VGS = 10V, enabling efficient power handling with minimal conduction losses.

 

This MOSFET is housed in a compact 8-SOIC surface-mount package with a 0.154-inch body width, suitable for space-constrained PCB layouts. It supports a wide operating junction temperature range from -55°C to 150°C, ensuring reliable performance across demanding thermal environments. The device is halogen-free and rated for a maximum power dissipation of 3.25W at 25°C case temperature.

 

Key electrical characteristics include a gate threshold voltage of 2.4V maximum, input capacitance of 2110pF, and total gate charge of 45nC at VGS = 10V. The part also features a pulsed drain current capability of 50A and single-pulse avalanche energy rating of 20mJ, making it suitable for applications requiring robust switching performance.

SI4204DY-T1-GE3 Quick Information

Product Type: MOSFET Array
Canonical Name: SI4204DY-T1-GE3 Dual N-Channel MOSFET
Subcategory: Dual N-Channel

SI4204DY-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI4204DY-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI4204DY-T1-GE3 Features

  • Dual N-Channel MOSFET in 8-SOIC package.
  • 20V maximum drain-to-source voltage rating.
  • 19.8A continuous drain current at 25°C.
  • 4.6mΩ low on-resistance at VGS=10V.
  • Halogen-free and RoHS3 compliant.

SI4204DY-T1-GE3 Applications

  • Low-voltage DC-DC converter circuits.
  • Power management in portable electronics.
  • Load switching and battery protection.
  • Motor drive and solenoid control.

SI4204DY-T1-GE3 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the SI4204DY-T1-GE3?

The maximum drain-to-source voltage is 20V.

What is the continuous drain current rating?

The continuous drain current is 19.8A at a case temperature of 25°C.

What is the on-resistance of this MOSFET?

The maximum on-resistance is 4.6mΩ at VGS=10V and ID=10A.

What package does the SI4204DY-T1-GE3 come in?

It comes in an 8-SOIC surface-mount package.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Is the SI4204DY-T1-GE3 halogen-free?

Yes, the device is halogen-free.

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