| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
301,000 pcs
|
301000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
51,020 pcs
|
51020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
5,083 pcs
|
5083 pcs | On Request | 1 | On Request | On Request | 20+ | On Request | On Request | |
|
35 pcs
|
35 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI4202DY-T1-GE3 is a Dual N-Channel MOSFET designed for power management applications. It features a 30V drain-source breakdown voltage and a continuous drain current rating of 12.1A at 25°C case temperature.
This MOSFET offers a low on-state resistance of 0.014 Ohms at 8A and 10V Vgs, and a gate charge of 5.4 nC typical. The device operates within a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 3.7W at 25°C case temperature.
Packaged in an 8-SOIC (0.154", 3.90mm Width) surface mount configuration, the SI4202DY-T1-GE3 is suitable for applications such as synchronous buck converters in notebooks and servers.
Key electrical characteristics include a gate-source threshold voltage of 2.5V maximum and an input capacitance of 710pF. The device is also compliant with RoHS Directive 2002/95/EC and is halogen-free.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating junction and storage temperature range is -55°C to 150°C.
The drain-source breakdown voltage is 30 V at VGS = 0 V and ID = 250 µA.
The continuous drain current is 12.1 A at TC = 25°C.
The device is packaged in an 8-SOIC (0.154", 3.90mm Width) surface-mount package with a supplier device package of 8-SOIC.
The typical drain-source on-state resistance is 0.0115 Ohm at VGS = 10 V, ID = 8 A; maximum is 0.0140 Ohm.
Yes, the datasheet indicates it is halogen-free and lead (Pb)-free compliant.
The typical input capacitance is 710 pF at VDS = 15 V, VGS = 0 V, f = 1 MHz.