| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
231,795 pcs
|
231795 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI4190DY-T1-GE3 is an N-Channel Power MOSFET designed for applications such as DC/DC primary side switching, telecom, server, and industrial uses. It features a maximum drain-source voltage of 100V and a continuous drain current of up to 20A at 25°C case temperature.
This MOSFET offers a low on-state resistance of 8.8mOhm at 15A and 10V Vgs, and 12mOhm at 10A and 4.5V Vgs. The input capacitance is typically 2000pF at 50V Vds, and the gate charge is typically 18.3nC at 10V Vgs.
Packaged in an 8-SOIC (0.154", 3.90mm Width) surface-mount package, the SI4190DY-T1-GE3 is suitable for various board layouts. It operates within a junction and storage temperature range of -55°C to 150°C. The device is also noted as being Halogen-free and Lead (Pb)-free, compliant with RoHS Directive 2002/95/EC.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 100 V.
The typical Rds On is 8.8 mOhm at 15A and 10V Vgs.
The continuous drain current is 20A at TC = 25 °C.
It is available in an 8-SOIC (0.154", 3.90mm Width) surface-mount package.
The RoHS status is RoHS3 Compliant.
The MSL is 1 Unlimited.