| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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5,000 pcs
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5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | 2026-02-16 21:33:16 | |
|
16 pcs
|
16 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
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| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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This Vishay Dale SI4190ADY-T1-GE3 is an N-Channel power MOSFET designed for various applications including DC/DC primary side switching, telecom/server, and industrial uses. It offers a high drain-source breakdown voltage of 100V and a maximum continuous drain current of 18.4A at 25°C case temperature.
The MOSFET exhibits a low on-resistance, with a maximum of 8.8mOhm at 15A drain current and 10V gate-source voltage. It also provides a typical gate charge of 20.7nC. The device operates within a temperature range of -55°C to +150°C.
Packaged in an 8-SOIC surface-mount case, this component is suitable for compact designs. Its technology includes Vishay's TrenchFET power MOSFET design, ensuring robust performance. The device is rated for ±20V gate-source voltage and has a maximum power dissipation of 6W at 25°C case temperature.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source breakdown voltage is 100V.
The maximum continuous drain current at 25°C case temperature is 18.4A.
The maximum on-resistance at 15A drain current and 10V gate-source voltage is 8.8mOhm.
The operating junction and storage temperature range is -55°C to +150°C.
The SI4190ADY-T1-GE3 is supplied in an 8-SOIC package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.