| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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164,364 pcs
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164364 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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68,520 pcs
|
68520 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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66,238 pcs
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66238 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
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1,188 pcs
|
1188 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI4178DY-T1-GE3 is an N-Channel MOSFET designed for power applications. It offers a drain-source voltage of 30V and a maximum continuous drain current of 12A at 25°C case temperature.
This MOSFET utilizes TrenchFET technology and is 100% Rg and UIS tested. Key electrical characteristics include a low on-resistance of 0.021 Ohms at 10V Vgs and a gate charge of 12 nC typical. The device operates over a temperature range of -55°C to 150°C.
Packaged in an 8-SOIC (0.154", 3.90mm Width) case, the SI4178DY-T1-GE3 is suitable for surface mounting. Its thermal resistance is rated at 53°C/W maximum junction-to-ambient.
Applications for this MOSFET include notebook system power and low current DC/DC converters.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 30V minimum at VGS = 0V, ID = 250μA.
The continuous drain current is 12A maximum at case temperature 25°C, and 9.7A at 70°C case temperature.
The maximum on-resistance is 21mOhm at 8.4A drain current and 10V gate-source voltage. At 4.5V gate-source voltage, the maximum on-resistance is 33mOhm.
The operating junction and storage temperature range is -55°C to 150°C.
The device is available in an 8-SOIC (0.154", 3.90mm Width) surface mount package.
The maximum gate charge is 12nC at 10V gate-source voltage.
The maximum input capacitance is 405pF at 15V drain-source voltage.