| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,834 pcs
|
4834 pcs | On Request | 1 | On Request | On Request | 11+ | On Request | On Request | |
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | 1113+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SI4176DY-T1-GE3 from Vishay Dale is an N-Channel MOSFET designed for various electronic applications. It features a maximum drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 12A at 25°C. The on-resistance (Rds On) is a maximum of 20mOhm at 8.3A and 10V gate-source voltage.
This MOSFET has a gate threshold voltage (Vgs(th)) of 2.2V at 250µA and a maximum gate-source voltage (Vgs Max) of ±20V. Input capacitance (Ciss) is 490 pF at 15V, and gate charge (Qg) is 15 nC at 10V. The device operates within a temperature range of -55°C to 150°C (TJ).
Packaged in an 8-SOIC (0.154", 3.90mm Width) format, the SI4176DY-T1-GE3 is designed for surface mounting. Its power dissipation is rated at 2.4W (Ta) and 5W (Tc). The technology used is MOSFET (Metal Oxide).
This component is suitable for applications requiring efficient switching and power handling. Its specifications make it a viable option for power management circuits, motor control, and other general-purpose switching applications where a 30V N-channel MOSFET is needed.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
8-SOIC (0.154 inch width).
-55°C to 150°C (junction temperature).
12A at 25°C case temperature.
20mOhm maximum at 8.3A drain current and 10V gate drive.
15nC maximum at 10V gate voltage.
2.2V maximum at 250µA drain current.