| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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273 pcs
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273 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI4174DY-T1-GE3 is a single N-Channel power MOSFET designed for applications requiring efficient switching. It offers a drain-source voltage (Vds) of 30V and a continuous drain current (Id) of 17A at 25°C case temperature.
Key electrical characteristics include a maximum on-resistance (Rds(on)) of 9.5mOhm when driven at 10V Vgs and 10A Id. The gate charge (Qg) is typically 8nC. The device operates over a wide temperature range of -55°C to 150°C.
This MOSFET is housed in an 8-SOIC package, suitable for surface mounting. Its technology is based on MOSFET (Metal Oxide) with a TrenchFET design, ensuring high performance and reliability.
Applications include notebook CPU core and high-side switching, benefiting from its robust power handling and low on-state resistance.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30 V minimum at Vgs=0V, Id=250µA.
17 A at Tc=25°C.
-55°C to +150°C junction/storage.
8-SOIC (SO-8) surface mount package.
8 nC at Vgs=10V.
9.5 mOhm at Id=10A, Vgs=10V.
TrenchFET silicon N-Channel MOSFET.