| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,410 pcs
|
1410 pcs | On Request | 1 | On Request | On Request | 03+ | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI4168DY-T1-GE3 is a high-performance N-Channel Power MOSFET designed for demanding applications. It features a 30V drain-source breakdown voltage and a low on-state resistance of 5.7 mOhm at 20A and 10V gate-source voltage. The device can handle a continuous drain current of up to 24A at 25°C case temperature.
This MOSFET utilizes Vishay's TrenchFET technology, offering excellent power handling and efficiency. It is rated for a continuous drain current of 16A at 25°C ambient temperature and 14A at 70°C ambient temperature. The operating junction and storage temperature range is from -55°C to 150°C.
Packaged in an 8-SOIC (0.154", 3.90mm Width) surface-mount package, the SI4168DY-T1-GE3 is suitable for various DC/DC applications, including notebook power management. Its robust construction and reliable performance make it a suitable choice for power conversion circuits requiring efficient switching and low conduction losses.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 30V.
The maximum continuous drain current is 24A at 25°C case temperature.
The Rds On is a maximum of 5.7mOhm at 20A drain current and 10V gate-source voltage.
The operating junction and storage temperature range is -55°C to 150°C.
It is available in an 8-SOIC package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.