| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
144,640 pcs
|
144640 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
12,515 pcs
|
12515 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI4166DY-T1-GE3 is a single N-Channel MOSFET designed for various applications. It features a maximum drain-source voltage of 30V and a continuous drain current rating of 30.5A at 25°C case temperature.
Key electrical characteristics include a low on-resistance (RDS(on)) of 3.9mOhm at 15A and 10V Vgs, and 5.5mOhm at 15A and 4.5V Vgs. The gate charge (Qg) is typically 65nC at 10V Vgs. The device operates within a junction temperature range of -55°C to 150°C.
This MOSFET is housed in an 8-SOIC package suitable for surface mounting. It is designed for applications such as low-side DC/DC conversion, commonly found in notebook PCs and gaming devices. The part is also specified as Lead (Pb)-free and Halogen-free.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
8-SOIC surface-mount package.
-55°C to 150°C.
30.5A.
3.9mOhm at 15A.
2.4V maximum at 250µA.
65nC at 10V.