| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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120,533 pcs
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120533 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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53,520 pcs
|
53520 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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50,000 pcs
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50000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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17,904 pcs
|
17904 pcs | On Request | 1 | On Request | On Request | 12+ | On Request | On Request | |
|
1,298 pcs
|
1298 pcs | On Request | 1 | On Request | On Request | N/A | On Request | On Request | |
|
250 pcs
|
250 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI4164DY-T1-GE3 is a single N-Channel TrenchFET power MOSFET designed for DC/DC conversion and low-side switching applications. It offers a 30V drain-source breakdown voltage and a continuous drain current of up to 30A at 25°C case temperature.
Key electrical characteristics include a maximum drain-source on-resistance (RDS(on)) of 3.2mΩ at 15A and 10V Vgs, and a typical gate charge (Qg) of 26.5nC. The device operates within a junction temperature range of -55°C to +150°C.
Packaged in an 8-SOIC surface mount package, the SI4164DY-T1-GE3 is suitable for various applications including notebook PCs and gaming systems. Its TrenchFET technology ensures high performance and efficiency.
Absolute maximum ratings include a continuous drain current of 30A at TC=25°C and a pulsed drain current of up to 70A. Power dissipation is rated at 6W (TC=25°C) and 3W (TA=25°C).
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum continuous drain current is 30A at 25°C case temperature.
The drain-source breakdown voltage is 30V.
The typical gate charge is 26.5nC.
The operating junction and storage temperature range is -55°C to +150°C.
It is supplied in an 8-SOIC package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.