| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,020 pcs
|
6020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,760 pcs
|
2760 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SI4160DY-T1-GE3 is an N-Channel enhancement-mode MOSFET manufactured by Vishay Dale. It is designed for high-efficiency power switching applications.
Key electrical specifications include a minimum drain-source breakdown voltage of 30V, a maximum continuous drain current of 25.4A at case temperature 25°C, and a maximum on-resistance of 4.9mOhm at VGS = 10V and ID = 15A. The gate-source threshold voltage is 2.4V maximum at ID = 250µA. The device can handle pulsed drain currents up to 70A.
The MOSFET is housed in an 8-pin SO package, suitable for surface-mount assembly. It is commonly used in DC-DC converters, power management circuits, and load switching applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum drain-source breakdown voltage is 30V at VGS = 0V and ID = 250µA.
The maximum continuous drain current is 25.4A at case temperature 25°C, and 20.2A at case temperature 70°C.
The maximum on-resistance is 4.9mOhm at VGS = 10V and ID = 15A, and 6.3mOhm at VGS = 4.5V.
The maximum gate-source threshold voltage is 2.4V at ID = 250µA.
The maximum gate-source voltage is ±20V.