| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
401,778 pcs
|
401778 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
13,520 pcs
|
13520 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI4156DY-T1-GE3 is a high-performance N-Channel MOSFET designed for various power applications. It features a maximum drain-source voltage (Vds) of 30V and a continuous drain current (Id) of up to 24A at 25°C case temperature.
This MOSFET offers a low on-state resistance (Rds On) of 0.006 Ohms at 15.7A and 10V Vgs, ensuring efficient power transfer. The input capacitance (Ciss) is 1700 pF at 15V, and the gate charge (Qg) is 42 nC at 10V.
Packaged in an 8-SOIC (0.154", 3.90mm Width) case, the SI4156DY-T1-GE3 is suitable for surface mounting. It operates within a temperature range of -55°C to 150°C (TJ). The device is halogen-free and compliant with RoHS3 standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 30V.
The typical gate-source threshold voltage is 1.15V.
The maximum continuous drain current is 24A at 25°C case temperature.
The Rds On is a maximum of 0.006 Ohms at 15.7A and 10V Vgs.
The operating junction and storage temperature range is -55°C to 150°C.
It is in an 8-SOIC package.
Yes, it is RoHS3 Compliant.