SI4154DY-T1-GE3 The Vishay Dale SI4154DY-T1-GE3 is an N-Channel MOSFET with a 40V drain-source voltage and 36A continuous drain current. It is housed in an 8-SOIC package for surface mounting.
Mfr Part #:

SI4154DY-T1-GE3

Available from 3 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI4154DY-T1-GE3 is an N-Channel MOSFET with a 40V drain-source voltage and 36A continuous drain current. It is housed in an 8-SOIC package for surface mounting.
✓ Total Stock: 37,767 pcs
$ Price Range: $0.99

SI4154DY-T1-GE3 Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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36,160 pcs
36160 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,357 pcs
1357 pcs On Request 1 On Request On Request On Request On Request On Request
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250 pcs
250 pcs On Request 1 On Request On Request On Request On Request On Request

SI4154DY-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI4154DY-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI4154DY-T1-GE3 is a high-performance N-Channel MOSFET designed for demanding applications. It features a 40V drain-source breakdown voltage and a maximum continuous drain current of 36A at 25°C case temperature.

 

This MOSFET offers a low on-resistance of 3.3mOhm at 15A and 10V Vgs, contributing to efficient power delivery. The gate charge is typically 32.5 nC, and the gate-source threshold voltage is 2.5V at 250µA.

 

Designed for surface mounting, the SI4154DY-T1-GE3 comes in a standard 8-SOIC package. It operates within a junction temperature range of -55°C to +150°C and has a maximum power dissipation of 3.5W at 25°C ambient temperature.

 

Key features include TrenchFET power MOSFET technology, 100% Rg and UIS tested, and compliance with RoHS and halogen-free standards. Applications include POL (Point-of-Load) converters and synchronous rectification.

SI4154DY-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SI4154DY-T1-GE3 N-Channel MOSFET
Subcategory: N-Channel

SI4154DY-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead (Pb)-free

SI4154DY-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI4154DY-T1-GE3 Features

  • N-Channel TrenchFET power MOSFET.
  • 40V drain-source voltage rating.
  • 36A continuous drain current.
  • Low 3.3mOhm Rds On at 10V Vgs.
  • Surface mount 8-SOIC package.

SI4154DY-T1-GE3 Applications

  • Suitable for POL converters.
  • Used for synchronous rectification.
  • Designed for power management circuits.

SI4154DY-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage for the SI4154DY-T1-GE3?

The drain-source breakdown voltage is 40 V.

What is the maximum continuous drain current?

The maximum continuous drain current is 36A at 25°C case temperature.

What is the Rds On (Max) at Vgs = 10V?

The Rds On (Max) at Vgs = 10V is 3.3mOhm.

What is the operating temperature range?

The operating junction and storage temperature range is -55°C to +150°C.

What package type is the SI4154DY-T1-GE3 in?

It is in an 8-SOIC (0.154", 3.90mm Width) package.

Is the SI4154DY-T1-GE3 RoHS compliant?

Yes, it is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL)?

The Moisture Sensitivity Level is 1 Unlimited.

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