| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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129,143 pcs
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129143 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI4143DY-T1-GE3 is a P-Channel MOSFET featuring TrenchFET® technology. It is rated for a drain-source voltage of 30V and a continuous drain current of up to 25.3A at 25°C case temperature. The device exhibits a low on-resistance of 6.2mOhm at 10V gate-source voltage and 12A drain current.
This MOSFET is suitable for applications such as adaptor switches and load switches, commonly found in power management systems and notebook computers. It is housed in an 8-SOIC package and designed for surface mounting.
Key electrical characteristics include a gate charge of 167nC at 10V and an input capacitance of 6630pF at 15V. The operating temperature range is -55°C to 150°C. The device is 100% Rg and UIS tested, ensuring reliability for demanding applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is -30V.
The maximum continuous drain current is 25.3A at 25°C case temperature.
The Rds On (Max) is 6.2mOhm at Vgs = -10V and 12A.
The operating junction and storage temperature range is -55°C to 150°C.
The package type is 8-SOIC (0.154", 3.90mm Width).
Yes, it is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.