SI4134DY-T1-GE3 The Vishay Dale SI4134DY-T1-GE3 is an N-Channel MOSFET with a 30V drain-source voltage and 14A continuous drain current. It is supplied in an 8-SOIC package.
Mfr Part #:

SI4134DY-T1-GE3

Available from 7 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI4134DY-T1-GE3 is an N-Channel MOSFET with a 30V drain-source voltage and 14A continuous drain current. It is supplied in an 8-SOIC package.
✓ Total Stock: 540,647 pcs
$ Price Range: $0.99

SI4134DY-T1-GE3 Available from 7 distributors

✓ Authorised
✓ Non-Authorised

SI4134DY-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI4134DY-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI4134DY-T1-GE3 is an N-Channel MOSFET designed for power applications. It features a maximum drain-source voltage of 30V and a continuous drain current rating of 14A at 25°C case temperature.

 

Key electrical characteristics include a low maximum on-resistance of 14mOhm at 10A and 10V Vgs, and a gate charge of 7.3nC typical. The gate threshold voltage is 2.5V maximum at 250µA.

 

This MOSFET is housed in an 8-SOIC package suitable for surface mounting. It operates across a wide temperature range from -55°C to 150°C (TJ). The device utilizes TrenchFET technology for enhanced performance.

 

Applications include DC/DC conversion and notebook system power, leveraging its power handling capabilities and efficient switching characteristics.

SI4134DY-T1-GE3 Quick Information

Product Type: MOSFET
Series: Si4
Canonical Name: SI4134DY-T1-GE3 N-Channel MOSFET
Subcategory: Transistors - FETs, MOSFETs - Single

SI4134DY-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI4134DY-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI4134DY-T1-GE3 Features

  • N-Channel 30V power MOSFET.
  • Low 14mOhm Rds On at 10A, 10V.
  • Continuous drain current of 14A.
  • Surface mount 8-SOIC package.
  • Wide -55°C to 150°C operating temperature.

SI4134DY-T1-GE3 Applications

  • DC-DC converter and power management circuits.
  • Load switching in portable electronics.
  • Battery protection and charging systems.
  • Motor drive and solenoid control applications.

SI4134DY-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the SI4134DY-T1-GE3?

30 V

What is the continuous drain current rating?

14 A at Tc = 25 °C

What is the on-resistance of the device?

14 mOhm at 10A, 10V (maximum)

What package is the SI4134DY-T1-GE3 available in?

8-SOIC (0.154", 3.90mm Width)

What is the operating temperature range?

-55°C to 150°C

What is the total gate charge?

23 nC at 10V

What is the input capacitance?

846 pF at 15 V

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