| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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6,020 pcs
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6020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Vishay Dale SI4134DY-T1-E3 is an N-Channel MOSFET designed for power applications. It features a 30V drain-source breakdown voltage and a low on-resistance of 14mΩ at 10A and 10V gate-source voltage.
This MOSFET is rated for a continuous drain current of 14A at 25°C case temperature and has a maximum power dissipation of 5W at 25°C case temperature, or 2.5W at 25°C ambient temperature. The operating temperature range is from -55°C to 150°C.
Packaged in an 8-SOIC (0.154", 3.90mm Width) surface-mount package, the SI4134DY-T1-E3 is suitable for DC/DC conversion applications, including notebook system power. It is built using TrenchFET® power MOSFET technology and is 100% Rg and UIS tested.
Key electrical parameters include a gate charge of 23nC at 10V and an input capacitance of 846pF at 15V. The gate-source voltage is rated up to ±20V, and the gate threshold voltage is a maximum of 2.5V at 250µA.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V
-55°C to 150°C
8-SOIC surface mount package
14mΩ at VGS=10V, ID=10A
2.5V at ID=250µA
14A at case temperature 25°C
23nC at VGS=10V