SI4128DY-T1-GE3 The Vishay Dale SI4128DY-T1-GE3 is an N-Channel MOSFET with a 30V drain-source breakdown voltage and a continuous drain current of 10.9A. It features a low Rds On of 24mOhm at 10V.
Mfr Part #:

SI4128DY-T1-GE3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI4128DY-T1-GE3 is an N-Channel MOSFET with a 30V drain-source breakdown voltage and a continuous drain current of 10.9A. It features a low Rds On of 24mOhm at 10V.
✓ Total Stock: 280,786 pcs
$ Price Range: $0.99

SI4128DY-T1-GE3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
258,286 pcs
258286 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
22,500 pcs
22500 pcs On Request 1 On Request On Request 1052+ On Request On Request

SI4128DY-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI4128DY-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI4128DY-T1-GE3 is a single N-Channel MOSFET designed for surface mount applications. It offers a drain-source breakdown voltage of 30V and can handle a continuous drain current of up to 10.9A. The MOSFET exhibits a low on-resistance (Rds On) of 24mOhm at a gate-source voltage of 10V, making it suitable for efficient power switching.

 

Key electrical characteristics include a gate threshold voltage of 2.5V at 250µA, a gate-source voltage range of ±20V, and a gate charge of 12nC at 10V. The input capacitance is rated at 435pF at 15V. The device operates within a temperature range of -55°C to 150°C.

 

Packaged in an 8-SOIC (0.154", 3.90mm Width) case, this MOSFET is designed for surface mounting. It is supplied on a reel and has a factory pack quantity of 2500 units. The technology used is Metal Oxide Semiconductor Field-Effect Transistor (MOSFET).

SI4128DY-T1-GE3 Quick Information

Product Type: MOSFET
Series: Si4
Canonical Name: Vishay Dale SI4128DY-T1-GE3 N-Channel MOSFET
Subcategory: Single

SI4128DY-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

SI4128DY-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI4128DY-T1-GE3 Features

  • N-Channel MOSFET with 30V breakdown voltage.
  • 10.9A continuous drain current capability.
  • Low 24mOhm Rds On at 10V.
  • Surface mount 8-SOIC package.
  • RoHS3 compliant for modern designs.

SI4128DY-T1-GE3 Applications

  • Suitable for power switching circuits.
  • Ideal for general purpose electronics.
  • Used in compact surface mount designs.
  • Efficient for low voltage applications.

SI4128DY-T1-GE3 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage for the SI4128DY-T1-GE3?

The drain-source breakdown voltage is 30V.

What is the maximum continuous drain current?

The maximum continuous drain current is 10.9A.

What is the Rds On for this MOSFET?

The Rds On is a maximum of 24mOhm at 7.8A drain current and 10V gate-source voltage.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C.

What package type is the SI4128DY-T1-GE3?

It is supplied in an 8-SOIC (0.154", 3.90mm Width) package for surface mounting.

Is this MOSFET RoHS compliant?

Yes, it is RoHS3 compliant.

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