| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,000 pcs
|
7000 pcs | On Request | 1 | On Request | On Request | 11+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI4128DY-T1-E3 is an N-Channel MOSFET designed for various electronic applications. It features a maximum drain-source voltage of 30V and a continuous drain current rating of 10.9A. The on-resistance (Rds On) is specified at a maximum of 24mOhm at 7.8A and 10V gate-source voltage.
This MOSFET operates within a temperature range of -55°C to 150°C. Key electrical parameters include a gate charge of 12nC at 10V and an input capacitance of 435pF at 15V. The gate-source breakdown voltage is ±20V, and the gate threshold voltage is a maximum of 2.5V at 250µA.
Packaged in an 8-SOIC narrow surface-mount configuration, the SI4128DY-T1-E3 is suitable for automated assembly processes. The device has a power dissipation rating of 2.4W (Ta) and 5W (Tc). It also includes specifications for fall time (10 ns), rise time (10 ns), and typical turn-off delay time (13 ns).
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
10.9A at ambient temperature.
24mOhm maximum at 7.8A and 10V gate drive.
12nC at 10V.
-55°C to 150°C junction temperature.
8-SOIC narrow surface-mount package.
435pF at 15V Vds.