| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3,520 pcs
|
3520 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
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| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI4126DY-T1-GE3 is an N-Channel power MOSFET designed for efficient power management applications. It offers a 30V drain-source breakdown voltage and a high continuous drain current capability of up to 39A at 25°C case temperature.
Key electrical characteristics include a low on-resistance (Rds On) of 2.75mOhm at 15A and 10V Vgs, and 3.4mOhm at Vgs of 4.5V. The typical gate charge is 30nC. The MOSFET is rated for a wide operating temperature range of -55°C to 150°C.
This component utilizes TrenchFET® technology for improved performance and is tested for Rg and UIS. It is housed in a standard 8-SOIC surface mount package, making it suitable for various board layouts. The device is designed for applications such as low-side DC/DC conversion in notebooks and gaming systems.
Absolute maximum ratings include a pulsed drain current of 70A and a single pulse avalanche current of 40A. Power dissipation is rated at 7.8W (Tc) and 3.5W (Ta).
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
8-SOIC (0.154", 3.90mm Width) surface-mount package.
-55°C to 150°C junction temperature.
39A at case temperature 25°C, 31A at 70°C, 26.5A at ambient 25°C.
2.75mOhm at VGS=10V and ID=15A, 3.4mOhm at VGS=4.5V.
30nC typical at VGS=10V.
4405pF maximum at VDS=15V.