| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
8,520 pcs
|
8520 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
120 pcs
|
120 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI4124DY-T1-GE3 is a TrenchFET® power MOSFET designed for applications such as synchronous rectification and DC/DC conversion. It features an N-Channel configuration with a drain-source voltage (Vds) of 40V and a maximum continuous drain current (Id) of 20.5A at 25°C case temperature.
Key electrical characteristics include a low on-resistance (Rds(on)) of 7.5mOhm at 14A and 10V Vgs, and a gate threshold voltage (Vgs(th)) of 3V at 250µA. The device also offers a typical gate charge (Qg) of 21nC at 10V Vgs and an input capacitance (Ciss) of 3540pF at 20V Vds.
This MOSFET operates within a temperature range of -55°C to +150°C (TJ) and has a maximum power dissipation of 5.7W (Tc) or 2.5W (Ta). It is supplied in an 8-SOIC package suitable for surface mounting.
The SI4124DY-T1-GE3 is RoHS3 compliant and has an MSL rating of 1 Unlimited.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
40V
8-SOIC with a 3.90mm width
-55°C to +150°C
±20V
4.7A at case temperature of 25°C
21nC