| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,581 pcs
|
2581 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI4122DY-T1-GE3 is a single N-Channel MOSFET designed for DC/DC conversion applications. It features a TrenchFET power MOSFET construction and is 100% Rg and UIS tested.
Key electrical specifications include a drain-source breakdown voltage of 40V and a maximum continuous drain current of 27.2A at 25°C case temperature. The Rds On is rated at a maximum of 4.5mOhm at 15A and 10V gate-source voltage. The gate charge (Qg) is typically 29nC, and the input capacitance (Ciss) is up to 4200pF.
This MOSFET operates within a junction temperature range of -55°C to +150°C. It is housed in an 8-SOIC package and features a surface mount type. The device is designed for reliable performance with a maximum power dissipation of 6W at 25°C case temperature and 3W at 25°C ambient temperature.
The SI4122DY-T1-GE3 is lead (Pb)-free and halogen-free, indicating compliance with modern environmental standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
40 V minimum at VGS = 0 V, ID = 250 μA.
8-SOIC (0.154", 3.90mm Width) surface mount package.
-55°C to 150°C junction temperature.
27.2 A at case temperature 25°C, 20.1 A at 70°C.
95 nC at Vgs = 10 V.
4.5 mOhm at Id = 15 A, Vgs = 10 V.
4200 pF at Vds = 20 V.