SI4116DY-T1-GE3 The Vishay Dale SI4116DY-T1-GE3 is an N-Channel MOSFET with a 25V drain-source voltage and 18A continuous current rating. It is available in an 8-SOIC package.
Mfr Part #:

SI4116DY-T1-GE3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI4116DY-T1-GE3 is an N-Channel MOSFET with a 25V drain-source voltage and 18A continuous current rating. It is available in an 8-SOIC package.
✓ Total Stock: 2,691 pcs
$ Price Range: $0.99

SI4116DY-T1-GE3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,591 pcs
2591 pcs On Request 1 On Request On Request 1412+ On Request On Request
Non-Authorised Inventory information
100 pcs
100 pcs On Request 1 On Request On Request On Request On Request On Request

SI4116DY-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI4116DY-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI4116DY-T1-GE3 is a single N-Channel MOSFET designed for power applications. It features a TrenchFET power MOSFET construction and is 100% Rg and UIS tested.

 

Key electrical specifications include a drain-source breakdown voltage of 25V and a maximum continuous drain current of 18A at 25°C case temperature. The on-resistance is as low as 8.6mOhm at 10A and 10V gate-source voltage. The device operates over a wide temperature range of -55°C to 150°C.

 

This MOSFET is housed in an 8-SOIC package suitable for surface mounting. It is designed for applications such as synchronous buck converters, particularly for low-side switching.

 

The SI4116DY-T1-GE3 is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1.

SI4116DY-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SI4116DY-T1-GE3 N-Channel 25V MOSFET
Subcategory: Power MOSFET

SI4116DY-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI4116DY-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI4116DY-T1-GE3 Features

  • N-Channel TrenchFET power MOSFET.
  • 25V drain-source breakdown voltage.
  • 18A continuous drain current.
  • Low on-resistance: 8.6mOhm max.
  • Surface mount 8-SOIC package.

SI4116DY-T1-GE3 Applications

  • Synchronous buck low-side switch
  • High-efficiency power conversion circuits
  • Load switching in portable electronics
  • Power management for DC/DC converters

SI4116DY-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage?

The drain-source breakdown voltage is 25V.

What is the maximum continuous drain current?

The maximum continuous drain current is 18A at a case temperature of 25°C.

What is the maximum on-resistance?

The maximum on-resistance is 8.6mOhm at 10A drain current and 10V gate-source voltage.

What is the operating temperature range?

The operating junction and storage temperature range is -55°C to +150°C.

What package type is this MOSFET in?

This MOSFET is in an 8-SOIC package.

Is this product RoHS compliant?

Yes, this product is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL)?

The Moisture Sensitivity Level is 1.

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