| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,289 pcs
|
2289 pcs | On Request | 1 | On Request | On Request | 2017 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The Vishay Siliconix SI4108DY-T1-GE3 is an N-Channel Power MOSFET designed for various switching applications. It offers a drain-source voltage (VDS) of 75V and a continuous drain current (ID) of 20.5A at 25°C case temperature.
Key electrical characteristics include a low drain-source on-state resistance (Rds(on)) of 9.8mΩ at a gate-source voltage (VGS) of 10V and a drain current (ID) of 13.8A. The input capacitance (Ciss) is 2100pF at 38V, and the gate charge (Qg) is a maximum of 54nC at 10V.
This MOSFET is housed in a standard 8-SOIC package and is designed for surface mounting. It operates within a junction temperature range of -55°C to 150°C. The device is also noted as being Halogen-free.
Applications include primary side switching, half bridge configurations, and intermediate bus converters. It is tested 100% for R_g and UIS.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 75V.
The maximum continuous drain current is 20.5A at 25°C case temperature.
The Rds(on) is a maximum of 9.8mΩ at 13.8A and 10V gate-source voltage.
The input capacitance is 2100pF at 38V drain-source voltage and 1MHz.
The package type is 8-SOIC (0.154", 3.90mm Width).
Yes, this product is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.