| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
164,364 pcs
|
164364 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SI4104DY-T1-E3 from Vishay Dale is an N-Channel MOSFET designed for various electronic applications. It features a maximum drain-to-source voltage (Vdss) of 100V and a continuous drain current of 4.6A at case temperature.
Key electrical characteristics include a maximum on-resistance of 105mOhm at 5A and 10V gate drive. The gate charge (Qg) is 13nC maximum at 10V, and the gate threshold voltage (Vgs(th)) is 4.5V maximum. The MOSFET operates within a temperature range of -55°C to 150°C (TJ).
This component is packaged in an 8-SOIC (0.154", 3.90mm Width) case and utilizes surface mount technology. Its power dissipation is rated at 2.5W (Ta) and 5W (Tc). The device is specified as RoHS3 Compliant, with an MSL of 1, and REACH Unaffected status.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 100 V.
The maximum continuous drain current is 4.6 A (Tc).
The maximum on-resistance (Rds On) is 105 mOhm at 5A and 10V.
The operating temperature range is -55°C to 150°C (TJ).
It is in an 8-SOIC (0.154", 3.90mm Width) package and uses surface mount technology.