| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
296,393 pcs
|
296393 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Input Capacitance | |
| Mounting Type |
The Vishay Dale Si4102DY is an N-Channel Power MOSFET featuring TrenchFET technology. It offers a drain-source breakdown voltage of 100V and a low on-resistance, with a typical value of 0.158 Ω at VGS = 10V and ID = 3.8A. The continuous drain current is rated up to 3.8A at 25°C case temperature.
This MOSFET is suitable for high-frequency boost converter applications and LED backlighting for LCD TVs. It comes in a surface-mount SOIC package with 8 terminals.
Absolute maximum ratings include a continuous drain current of 3.8A and a gate-source voltage of ±20V. The operating junction and storage temperature range is -55°C to 150°C. Thermal resistance from junction-to-ambient is a maximum of 53°C/W.
The device is RoHS3 compliant, REACH unaffected, and features lead-free and halogen-free construction.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source breakdown voltage is 100V.
The typical on-resistance is 0.158 Ω.
The continuous drain current rating is 3.8A.
The operating junction and storage temperature range is -55°C to 150°C.
The Si4102DY is available in a surface mount SOIC package.
The Si4102DY is used in high frequency boost converters and LED backlights for LCD TVs.