SI4101DY-T1-GE3 The Vishay Dale SI4101DY-T1-GE3 is a P-Channel MOSFET with a 30V drain-source breakdown voltage and a continuous drain current of 25.7A. It is housed in a surface-mount 8-SOIC package.
Mfr Part #:

SI4101DY-T1-GE3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI4101DY-T1-GE3 is a P-Channel MOSFET with a 30V drain-source breakdown voltage and a continuous drain current of 25.7A. It is housed in a surface-mount 8-SOIC package.
✓ Total Stock: 55,854 pcs
$ Price Range: $0.99

SI4101DY-T1-GE3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
51,020 pcs
51020 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
4,834 pcs
4834 pcs On Request 1 On Request On Request On Request On Request On Request

SI4101DY-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI4101DY-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI4101DY-T1-GE3 is a P-Channel MOSFET designed for power applications. It features a drain-source breakdown voltage of 30V and can handle a continuous drain current of up to 25.7A at a case temperature.

 

Key electrical characteristics include a low drain-source on-resistance (Rds On) of 6mOhm at 15A and 10V, a gate-source threshold voltage (Vgs(th)) maximum of 2.5V at 250µA, and a gate charge (Qg) maximum of 203nC at 10V. The device operates within a temperature range of -55°C to 150°C (TJ) and has a power dissipation of 6W (Tc).

 

This MOSFET utilizes Metal Oxide technology and is packaged in an 8-SOIC (0.154", 3.90mm Width) case, suitable for surface mounting. The standard package quantity is 2500 units on a reel.

 

Compliance information indicates RoHS3 compliance and an MSL rating of 1.

SI4101DY-T1-GE3 Quick Information

Product Type: MOSFET
Series: Si4
Canonical Name: Vishay Dale SI4101DY-T1-GE3 P-Channel MOSFET
Subcategory: P-Channel

SI4101DY-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI4101DY-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI4101DY-T1-GE3 Features

  • P-Channel MOSFET with 30V breakdown voltage.
  • Continuous drain current of 25.7A.
  • Low 6mOhm Rds On at 15A, 10V.
  • Surface mount 8-SOIC package.
  • RoHS3 compliant and MSL 1 rated.

SI4101DY-T1-GE3 Applications

  • Suitable for power switching applications.
  • Used in various electronic circuits.
  • Ideal for space-constrained designs.
  • General purpose power management.

SI4101DY-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage of the SI4101DY-T1-GE3?

The drain-source breakdown voltage is 30 V.

What is the continuous drain current for the SI4101DY-T1-GE3?

The continuous drain current is 25.7 A.

What is the Rds On for the SI4101DY-T1-GE3?

The Rds On is a maximum of 6 mOhm at 15A and 10V.

What is the operating temperature range of the SI4101DY-T1-GE3?

The operating temperature range is -55°C to 150°C (TJ).

What package type is the SI4101DY-T1-GE3 available in?

The SI4101DY-T1-GE3 is available in an 8-SOIC package.

Is the SI4101DY-T1-GE3 RoHS compliant?

Yes, the SI4101DY-T1-GE3 is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the SI4101DY-T1-GE3?

The Moisture Sensitivity Level (MSL) is 1 Unlimited.

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