SI4100DY-T1-E3 The Vishay Dale Si4100DY-T1-E3 is an N-Channel MOSFET with a 100V drain-source voltage and 6.8A continuous drain current. It is supplied in an 8-SOIC package.
Mfr Part #:

SI4100DY-T1-E3

Available from 3 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale Si4100DY-T1-E3 is an N-Channel MOSFET with a 100V drain-source voltage and 6.8A continuous drain current. It is supplied in an 8-SOIC package.
✓ Total Stock: 248,152 pcs
$ Price Range: $0.99

SI4100DY-T1-E3 Available from 3 distributors

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241,067 pcs
241067 pcs On Request 1 On Request On Request On Request On Request On Request
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4,762 pcs
4762 pcs On Request 1 On Request On Request On Request On Request On Request
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2,323 pcs
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SI4100DY-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI4100DY-T1-E3 Description

Short technical summary and product information.

The Vishay Dale Si4100DY-T1-E3 is an N-Channel TrenchFET Power MOSFET designed for high-frequency applications. It features a maximum drain-source voltage (Vds) of 100V and a continuous drain current (Id) of 6.8A at 25°C case temperature. The device offers a low on-state resistance (Rds On) of 63mOhm at 4.4A and 10V gate-source voltage.

 

This MOSFET is suitable for applications such as high-frequency boost converters and LED backlights for LCD TVs. It operates within a temperature range of -55°C to 150°C and is available in an 8-SOIC surface mount package. The input capacitance (Ciss) is 600pF at 50V, and the gate charge (Qg) is 20nC at 10V.

 

The Si4100DY-T1-E3 is RoHS3 compliant and Halogen-free, meeting stringent environmental standards. Its compact 8-SOIC package and surface mount capability make it versatile for various electronic designs.

SI4100DY-T1-E3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale Si4100DY N-Channel 100V TrenchFET Power MOSFET
Subcategory: Single

SI4100DY-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI4100DY-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI4100DY-T1-E3 Features

  • N-Channel TrenchFET Power MOSFET
  • 100V Drain-Source Voltage
  • 6.8A Continuous Drain Current
  • 63mOhm Max Rds On
  • 8-SOIC Surface Mount Package

SI4100DY-T1-E3 Applications

  • Used in high frequency boost converters
  • Suitable for LED backlight in LCD TVs
  • Ideal for power management switching applications
  • Works in DC-DC converter circuits
  • Applicable for load switching in embedded systems

SI4100DY-T1-E3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the Si4100DY-T1-E3?

The maximum drain-source voltage is 100V.

What is the continuous drain current of the Si4100DY-T1-E3?

The continuous drain current is 6.8A at 25°C case temperature.

What is the Rds On for the Si4100DY-T1-E3?

The Rds On is a maximum of 63mOhm at 4.4A and 10V gate-source voltage.

What is the operating temperature range for this MOSFET?

The operating temperature range is -55°C to 150°C.

What package type is the Si4100DY-T1-E3 supplied in?

It is supplied in an 8-SOIC package.

Is the Si4100DY-T1-E3 RoHS compliant?

Yes, it is RoHS3 Compliant.

Is the Si4100DY-T1-E3 Halogen-free?

Yes, it is Halogen-free.

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