| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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200,000 pcs
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200000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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3,520 pcs
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3520 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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2,000 pcs
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2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1,124 pcs
|
1124 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
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| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Siliconix SI4090DY-T1-GE3 is an N-Channel TrenchFET® power MOSFET designed for various applications including DC/DC primary side switching, telecom/server, motor drive control, and synchronous rectification.
This MOSFET features a drain-source voltage (VDS) of 100V and a maximum continuous drain current (ID) of 19.7A at 25°C case temperature. Its low on-resistance is specified as 0.01 Ohm maximum at 15A and 10V gate-source voltage. The device also offers a gate charge (Qg) of 27.9 nC typical at 10V gate-source voltage and an input capacitance (Ciss) of 2410 pF maximum at 50V drain-source voltage.
Operating within a junction and storage temperature range of -55°C to +150°C, the SI4090DY-T1-GE3 has a maximum power dissipation of 7.8W at 25°C case temperature and 3.5W at 25°C ambient temperature when mounted on a 1" x 1" FR4 board. Thermal resistance is rated at 35°C/W maximum junction-to-ambient and 16°C/W maximum junction-to-foot.
The component is supplied in an 8-SOIC package and is suitable for surface mounting. It is designed to meet stringent industry standards, offering reliable performance for demanding power management tasks.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The SI4090DY-T1-GE3 is housed in an 8-SOIC (0.154", 3.90mm Width) surface mount package.
The operating junction temperature range is -55°C to 150°C.
The drain-source breakdown voltage is 100V minimum.
The recommended drive voltage for achieving minimum RDS(on) is 10V, with maximum specified at 6V.
The maximum on-resistance is 10 mOhm at VGS=10V and ID=15A.
The continuous drain current is 19.7A at TC=25°C.
The device uses TrenchFET power MOSFET technology.