| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
9,388 pcs
|
9388 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
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| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI4062DY-T1-GE3 is an N-Channel MOSFET designed for various applications including DC/DC converters and load switching. It features a TrenchFET power MOSFET construction and is 100% Rg and UIS tested.
Key electrical specifications include a drain-source voltage of 60V and a maximum continuous drain current of 32.1A at 25°C case temperature. The on-resistance (Rds On) is as low as 0.0042 Ohms at 20A and 10V gate-source voltage. The typical gate charge (Qg) is 18.8 nC.
This MOSFET is housed in an 8-SOIC package and supports surface mount technology. It operates within a junction temperature range of -55°C to +150°C. The maximum power dissipation is rated at 7.8W at 25°C case temperature.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 60V.
The maximum continuous drain current is 32.1A at 25°C case temperature.
The Rds On (Max) is 0.0042 Ohms at 20A and 10V gate-source voltage.
The SI4062DY-T1-GE3 is available in an 8-SOIC package.
The operating junction and storage temperature range is -55°C to +150°C.