Mfr Part #:

SI4058DY-T1-GE3

Name: SI4058DY-T1-GE3
Brand: Vishay
SKU: SI4058DY-T1-GE3
Availability: InStock

Mfr Name: Vishay

Description:

MOSFET N-CH 100V 10.3A 8SOIC

✓ Total Stock: 740 pcs

SI4058DY-T1-GE3 Available from 4 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Braun Electronic Components ✓ Non-Authorised Inventory information	1 pcs On Request	1 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
RAD ✓ Non-Authorised Inventory information	1 pcs On Request	1 pcs	On Request	1	On Request	On Request	1970-01-01 00:33:23	On Request	On Request
Risen Electronics ✓ Non-Authorised Inventory information	300 pcs On Request	300 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Speed Components Ltd ✓ Non-Authorised Inventory information	438 pcs On Request	438 pcs	On Request	1	On Request	On Request	1970-01-01 00:30:33	On Request	On Request

Short technical summary and product information.

MOSFET N-CH 100V 10.3A 8SOIC

Mfr Standard Lead Time: 12 weeks (varies by distributor)

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Vishay
Current	10.3A (Tc)
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	690 pF @ 50 V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Power Dissipation (Max)	5.6W (Tc)
Rds On (Max) @ Id, Vgs	26mOhm @ 10A, 10V
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2.8V @ 250µA