| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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21,020 pcs
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21020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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3,250 pcs
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3250 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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438 pcs
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438 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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300 pcs
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300 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1 pcs
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1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1 pcs
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1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI4058DY-T1-GE3 is an N-Channel power MOSFET designed for various applications including DC/DC primary side switching, synchronous rectification, fast chargers, and industrial uses.
This MOSFET features a Drain-Source Voltage (Vds) of 100V and a continuous drain current of 10.3A at 25°C case temperature. Its low on-resistance is 26mOhm at 10A and 10V Vgs, with a typical gate charge of 5.8 nC at 10V Vgs. The device operates within a temperature range of -55°C to 150°C.
Packaged in an 8-SOIC (0.154", 3.90mm Width) surface mount configuration, the SI4058DY-T1-GE3 is suitable for space-constrained designs. It is also specified as lead (Pb)-free and halogen-free.
Key electrical characteristics include a Gate-Source Voltage (Vgs) of ±20V and a Gate-Source Threshold Voltage (Vgs(th)) of 2.8V at 250µA. The maximum power dissipation is 5.6W at 25°C case temperature, with a junction-to-ambient thermal resistance of 48°C/W.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
100 V (minimum) at VGS = 0 V, ID = 250 μA.
8-SOIC (0.154", 3.90mm Width) surface mount package.
-55°C to 150°C (junction and storage).
10.3 A at TC = 25°C; 8.3 A at TC = 70°C; 7 A at TA = 25°C; 5.5 A at TA = 70°C.
26 mOhm maximum at VGS = 10 V, ID = 10 A; 33 mOhm maximum at VGS = 4.5 V.
2.8 V maximum at ID = 250 μA.
5.6 W at TC = 25°C; 2.6 W at TA = 25°C.