| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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241,067 pcs
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241067 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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26,020 pcs
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26020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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3,100 pcs
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3100 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1,790 pcs
|
1790 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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650 pcs
|
650 pcs | On Request | 1 | On Request | On Request | 14+ | On Request | On Request | |
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18 pcs
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18 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI4056DY-T1-GE3 is an N-Channel MOSFET featuring a 100V drain-source breakdown voltage and a maximum continuous drain current of 11.1A at 25°C case temperature. It offers a low on-resistance of 23mOhm at 15A and 10V gate-source voltage.
This MOSFET utilizes TrenchFET technology and is suitable for applications requiring efficient switching. It has a gate charge of 29.5 nC typical at 10V gate-source voltage and an input capacitance of 900 pF typical at 50V drain-source voltage.
The device operates within a temperature range of -55°C to 150°C (TJ) and is packaged in an 8-SOIC surface mount package. Its maximum power dissipation is rated at 2.5W (ambient) or 5.7W (case).
Key electrical characteristics include a gate-source voltage range of ±20V and a gate threshold voltage of 2.8V typical at 250µA. The SI4056DY-T1-GE3 is designed for applications such as DC/DC primary side switching, telecom, server, and industrial uses.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum drain-source breakdown voltage is 100 V at VGS = 0 V, ID = 250 μA.
The maximum continuous drain current is 11.1 A at Tc = 25 °C.
The maximum on-resistance is 23 mOhm at Id = 15 A, Vgs = 10 V.
The operating junction temperature range is -55°C to 150°C.
The device is available in an 8-SOIC surface-mount package (0.154", 3.90mm Width).
The maximum gate threshold voltage is 2.8 V at Id = 250 μA.
The maximum input capacitance is 900 pF at Vds = 50 V.