| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
17,500 pcs
|
17500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | 2026-02-16 21:33:16 | |
|
1,638 pcs
|
1638 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI4056ADY-T1-GE3 is an N-Channel MOSFET designed for various power switching applications. It features a Drain-Source Voltage (Vds) of 100V and a maximum continuous drain current of 8.3A at Tc=25°C, with a reduced rating of 5.9A at Ta=25°C. The MOSFET exhibits a low on-resistance of 29.2mOhm at a gate-source voltage of 10V and a drain current of 5.9A.
This device operates within a temperature range of -55°C to 150°C (TJ). It is packaged in an 8-SOIC (0.154", 3.90mm Width) surface-mount package. The technology utilized is MOSFET (Metal Oxide), and it supports a logic-level gate drive.
Key electrical characteristics include a gate-source voltage range of ±20V and a gate threshold voltage of 2.5V at 250µA. Input capacitance is rated at a maximum of 1330pF at 50V, and gate charge is a maximum of 29nC at 10V. The maximum power dissipation is 5W when measured at the case temperature (Tc=25°C) and 2.5W when measured at the ambient temperature (Ta=25°C).
Applications for this MOSFET include synchronous rectification, primary side switching, DC/DC converters, motor drive switches, LED drivers, and load switches. It is designed with TrenchFET Gen IV power MOSFET technology, offering a very low RDS x Qg figure-of-merit.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The Drain-Source Voltage (Vds) is 100V.
The maximum continuous drain current is 8.3A when measured at the case temperature (Tc=25°C) and 5.9A when measured at ambient temperature (Ta=25°C).
The maximum on-resistance is 29.2mOhm at a drain current of 5.9A and a gate-source voltage of 10V.
This MOSFET is supplied in an 8-SOIC package, designed for surface mounting.
The operating junction and storage temperature range is -55°C to 150°C.