SI4004DY-T1-GE3 The Vishay Dale SI4004DY-T1-GE3 is an N-Channel MOSFET with a 20V drain-source voltage and 12A continuous drain current. It is housed in an 8-SOIC package.
Mfr Part #:

SI4004DY-T1-GE3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI4004DY-T1-GE3 is an N-Channel MOSFET with a 20V drain-source voltage and 12A continuous drain current. It is housed in an 8-SOIC package.
✓ Total Stock: 5,000 pcs
$ Price Range: $0.99

SI4004DY-T1-GE3 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
5,000 pcs
5000 pcs On Request 1 On Request On Request 1342+ On Request On Request

SI4004DY-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs(th) (Max) @ Id

SI4004DY-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI4004DY-T1-GE3 is an N-Channel MOSFET designed for various electronic applications. It features a maximum drain-source voltage (Vds) of 20V and a continuous drain current (Id) of 12A at a case temperature of 25°C. The device exhibits a low on-state resistance (Rds(on)) of 13.8mΩ at 11A and 10V gate-source voltage.

 

This MOSFET utilizes TrenchFET technology and is suitable for applications such as DC/DC converters. It is packaged in an 8-SOIC (Small Outline Integrated Circuit) package, designed for surface mounting. The operating junction temperature ranges from -55°C to 150°C.

 

Key electrical characteristics include an input capacitance (Ciss) of 1280pF at 10V and a gate charge (Qg) of 33nC at 10V. The device also offers a breakdown voltage of 20V and a gate threshold voltage (Vgs(th)) of up to 2.5V at 250µA. It is compliant with RoHS Directive 2002/95/EC and is halogen-free according to IEC 61249-2-21 definition.

SI4004DY-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Siliconix Si4004DY N-Channel 20 V MOSFET
Subcategory: N-Channel

SI4004DY-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI4004DY-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI4004DY-T1-GE3 Features

  • N-Channel 20V MOSFET
  • 12A continuous drain current
  • Low Rds(on) of 13.8mOhm
  • 8-SOIC surface mount package
  • Halogen-free and RoHS3 compliant

SI4004DY-T1-GE3 Applications

  • Used in DC/DC converter circuits.
  • Suitable for power management applications.
  • Ideal for load switching in portable devices.
  • Designed for high-efficiency power conversion.

SI4004DY-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the SI4004DY-T1-GE3?

The maximum drain-source voltage is 20 V.

What is the continuous drain current of the SI4004DY-T1-GE3?

The continuous drain current is 12 A at a case temperature of 25°C.

What is the Rds On for the SI4004DY-T1-GE3?

The Rds On is a maximum of 13.8mOhm at 11A drain current and 10V gate-source voltage.

What is the package type for the SI4004DY-T1-GE3?

The device is supplied in an 8-SOIC package designed for surface mounting.

What is the operating temperature range for the SI4004DY-T1-GE3?

The operating junction and storage temperature range is -55°C to 150°C.

Is the SI4004DY-T1-GE3 RoHS compliant?

Yes, the SI4004DY-T1-GE3 is RoHS3 compliant.

Is the SI4004DY-T1-GE3 halogen-free?

Yes, the SI4004DY-T1-GE3 is halogen-free.

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