| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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76,020 pcs
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76020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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This Vishay Dale SI3993CDV-T1-GE3 is a dual P-channel MOSFET designed for surface mount applications. It offers a drain-source breakdown voltage of 30V and can handle a continuous drain current of up to 2.2A. The MOSFET exhibits a maximum Rds On of 111mOhm when tested at 2.5A and 10V gate-source voltage.
With a gate charge of 8nC at 10V and an input capacitance of 210pF at 15V, this component is suitable for various switching applications. It operates within a temperature range of -55°C to 150°C and is housed in a compact TSOP-6 package.
The device utilizes MOSFET technology and is configured as two P-channel transistors. Its typical rise time is 16ns, fall time is 12ns, and turn-off delay time is 17ns, making it efficient for high-speed switching circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
2.2A.
111mOhm maximum at Vgs=10V and Id=2.5A.
-55°C to 150°C junction temperature.
TSOP-6 (6-TSOP) surface mount package.
3.1nC.
210pF at Vds=15V.