SI3948DV-T1-E3 The Vishay Dale SI3948DV-T1-E3 is a dual N-channel MOSFET with a 30V drain-source voltage. It is designed for surface mount applications and comes in a TSOT-23-6 package.
Mfr Part #:

SI3948DV-T1-E3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI3948DV-T1-E3 is a dual N-channel MOSFET with a 30V drain-source voltage. It is designed for surface mount applications and comes in a TSOT-23-6 package.
✓ Total Stock: 205 pcs
$ Price Range: $0.99

SI3948DV-T1-E3 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
205 pcs
205 pcs On Request 1 On Request On Request On Request On Request On Request

SI3948DV-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Supplier Package
Technology
Vgs(th) (Max) @ Id

SI3948DV-T1-E3 Description

Short technical summary and product information.

The Vishay Dale SI3948DV-T1-E3 is a dual N-channel MOSFET array designed for surface mount applications. It features a drain-to-source voltage (Vdss) of 30V and a maximum on-resistance (Rds On) of 105mOhm at 2.5A and 10V.

 

This MOSFET array operates within a temperature range of -55°C to 150°C and has a gate charge (Qg) of 3.2nC maximum at 5V. The gate threshold voltage (Vgs(th)) is 1V maximum at 250µA, and it features a logic level gate.

 

The component is housed in a SOT-23-6 Thin, TSOT-23-6 package, also referred to as a 6-TSOP. It has a power dissipation rating of 1.15W. The RoHS status is indicated as RoHS3 Compliant, with an MSL of 1 Unlimited and REACH Unaffected status.

 

This MOSFET array is suitable for various electronic designs requiring efficient switching and power management in a compact form factor.

SI3948DV-T1-E3 Quick Information

Product Type: MOSFET Array
Canonical Name: Vishay Dale SI3948DV-T1-E3 Dual N-Channel MOSFET
Subcategory: Transistors - FETs, MOSFETs - Arrays

SI3948DV-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI3948DV-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI3948DV-T1-E3 Features

  • Dual N-channel MOSFET array.
  • 30V drain-to-source voltage.
  • 105mOhm maximum on-resistance.
  • Logic level gate feature.
  • TSOT-23-6 surface mount package.

SI3948DV-T1-E3 Applications

  • Used in portable power management circuits.
  • Ideal for load switching applications.
  • Suitable for DC-DC converters and regulators.
  • Common in battery protection circuits.
  • Used in signal switching and routing.

SI3948DV-T1-E3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the SI3948DV-T1-E3?

30V.

What package does the SI3948DV-T1-E3 come in?

SOT-23-6 Thin, TSOT-23-6 (6-TSOP).

What is the operating temperature range for the SI3948DV-T1-E3?

-55°C to 150°C.

What is the on-resistance of the SI3948DV-T1-E3?

Maximum 105mOhm at 2.5A and 10V gate drive.

Does the SI3948DV-T1-E3 have a logic-level gate?

Yes, it features a logic-level gate with a maximum threshold voltage of 1V.

What is the configuration of the MOSFETs?

Two N-channel MOSFETs in a dual configuration.

What is the maximum power dissipation?

1.15W.

Home

Categories