SI3932DV-T1-GE3 The Vishay Dale SI3932DV-T1-GE3 is a dual N-channel MOSFET with a 30V drain-source voltage rating and a continuous drain current of 3.7A. It features a low on-resistance and is designed for surface mounting.
Mfr Part #:

SI3932DV-T1-GE3

Available from 5 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI3932DV-T1-GE3 is a dual N-channel MOSFET with a 30V drain-source voltage rating and a continuous drain current of 3.7A. It features a low on-resistance and is designed for surface mounting.
✓ Total Stock: 621,815 pcs
$ Price Range: $0.99

SI3932DV-T1-GE3 Available from 5 distributors

✓ Authorised
✓ Non-Authorised

SI3932DV-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Supplier Package
Technology
Vgs(th) (Max) @ Id

SI3932DV-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI3932DV-T1-GE3 is a dual N-channel power MOSFET designed for load switch applications in portable devices and DC/DC converters. It offers a drain-source voltage (Vds) of 30V and a continuous drain current (Id) of up to 3.7A at 25°C.

 

Key electrical characteristics include a maximum on-resistance (Rds On) of 58mOhm at 3.4A and 10V Vgs, and a maximum gate charge (Qg) of 1.8nC at 10V Vgs. The device has a gate threshold voltage (Vgs(th)) of 2.2V maximum at 250µA Id.

 

This MOSFET is packaged in a 6-TSOP (SOT-23-6 Thin) package, suitable for surface mounting. It operates within a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 1.4W at 25°C.

 

The SI3932DV-T1-GE3 is specified as RoHS3 compliant, with an MSL rating of 1 and REACH unaffected status.

SI3932DV-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Siliconix SI3932DV-T1-GE3 Dual N-Channel 30 V MOSFET
Subcategory: Dual N-Channel

SI3932DV-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI3932DV-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI3932DV-T1-GE3 Features

  • Dual N-Channel 30V MOSFET.
  • 3.7A continuous drain current.
  • 58mOhm max Rds On at 10V.
  • Logic Level Gate feature.
  • Surface mount 6-TSOP package.

SI3932DV-T1-GE3 Applications

  • Used in power management circuits.
  • Suitable for low-voltage load switching.
  • Ideal for compact dual switch designs.

SI3932DV-T1-GE3 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage for the SI3932DV-T1-GE3?

The drain-source breakdown voltage is 30V.

What is the maximum continuous drain current?

The maximum continuous drain current is 3.7A at 25°C case temperature.

What is the maximum on-resistance (Rds On) for this MOSFET?

The maximum Rds On is 58mOhm at 3.4A and 10V Vgs.

What is the operating temperature range?

The operating junction and storage temperature range is -55°C to 150°C.

What package type is the SI3932DV-T1-GE3 in?

It is supplied in a 6-TSOP package.

Is the SI3932DV-T1-GE3 RoHS compliant?

Yes, it is RoHS3 compliant.

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