| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | 06+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Mounting Style | |
| Operating Temperature | |
| Power Dissipation |
The SI3911DV-T1-E3 is a Dual P-Channel MOSFET manufactured by Vishay Siliconix. This component is designed for surface mount applications and comes in a TSOT-23-6 package.
Key electrical specifications include a Drain-to-Source Voltage (Vds) of 20V and a Continuous Drain Current (Ids) of -2.20A. The Drain-to-Source On Resistance (Rds) is rated at 145mΩ. The maximum power dissipation is 830mW, and it operates within a temperature range of -55℃ to 150℃ (TJ).
This MOSFET is suitable for various general-purpose applications where P-channel enhancement mode switching is required. Its surface-mount package facilitates integration into compact electronic designs.
The maximum drain-to-source voltage is 20V.
The continuous drain current rating is -2.2A.
The drain-to-source on-resistance is 145mΩ.
The operating junction temperature range is -55°C to 150°C.
It is available in a TSOT-23-6 surface-mount package.
The maximum power dissipation is 830mW.
The gate-to-source breakdown voltage is ±8V.