| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
723,200 pcs
|
723200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
56 pcs
|
56 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The SI3900DV-T1-GE3 from Vishay Dale is a dual N-channel MOSFET designed for various electronic applications. It offers a drain-source voltage (Vdss) of 20V and a continuous drain current (Id) of 2A. The MOSFET exhibits a maximum on-resistance (Rds On) of 125mOhm when driven at 2.4A with a gate-source voltage (Vgs) of 4.5V. Its gate charge (Qg) is a maximum of 4nC at 4.5V, and the gate threshold voltage (Vgs(th)) is 1.5V at 250µA.
This device operates within a temperature range of -55°C to 150°C (TJ) and has a power dissipation of 830mW. It is built using MOSFET technology and features a logic level gate, making it suitable for low-voltage applications. The SI3900DV-T1-GE3 is packaged in a SOT-23-6 Thin, TSOT-23-6 (6-TSOP) case and is designed for surface mounting.
Compliance information indicates RoHS3 compliance, MSL 1, and REACH unaffected status, though these are unverified. The part number SI3900DV-T1-GE3 is typically associated with Vishay Siliconix, contrasting with the listed manufacturer Vishay Dale.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
20V
6-TSOP (SOT-23-6 Thin / TSOT-23-6)
-55°C to 150°C
2A
4nC maximum
125mΩ