SI3900DV-T1-E3 The Vishay Dale SI3900DV-T1-E3 is a dual N-channel MOSFET designed for 20V applications. It features a continuous drain current of up to 2.4A and a low on-resistance.
Mfr Part #:

SI3900DV-T1-E3

Available from 3 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI3900DV-T1-E3 is a dual N-channel MOSFET designed for 20V applications. It features a continuous drain current of up to 2.4A and a low on-resistance.
✓ Total Stock: 200,871 pcs
$ Price Range: $0.99

SI3900DV-T1-E3 Available from 3 distributors

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200,000 pcs
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863 pcs
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SI3900DV-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs(th) (Max) @ Id

SI3900DV-T1-E3 Description

Short technical summary and product information.

The Vishay Dale SI3900DV-T1-E3 is a dual N-channel MOSFET with a 20V drain-source voltage rating. It is designed for efficient power management and switching applications.

 

Key electrical characteristics include a maximum continuous drain current of 2.4A at 25°C and a maximum drain-source on-state resistance of 125mΩ at 2.4A and 4.5V Vgs. The device also features a logic level gate, making it suitable for lower voltage drive circuits. The operating junction temperature range is from -55°C to 150°C.

 

This MOSFET is housed in a compact 6-TSOP (SOT-23-6 Thin) surface-mount package, ideal for space-constrained designs. It offers a maximum power dissipation of 1.15W at 25°C. The device is compliant with RoHS3 standards and is halogen-free, meeting environmental regulations for electronic components.

SI3900DV-T1-E3 Quick Information

Product Type: MOSFET Array
Canonical Name: Dual N-Channel 20-V (D-S) MOSFET
Subcategory: Dual N-Channel

SI3900DV-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI3900DV-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI3900DV-T1-E3 Features

  • Dual N-Channel 20V MOSFET.
  • 2.4A continuous drain current.
  • 125mOhm max Rds(on) at 4.5V.
  • Logic Level Gate technology.
  • Compact 6-TSOP package.

SI3900DV-T1-E3 Applications

  • Suitable for power switching.
  • Ideal for battery management.
  • Used in portable electronics.
  • Applicable for load switching.

SI3900DV-T1-E3 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the SI3900DV-T1-E3?

The maximum drain-source voltage is 20V.

What is the continuous drain current rating?

The continuous drain current is 2.4A at 25°C and 1.7A at 85°C.

What is the maximum on-state resistance?

The maximum on-state resistance is 125mOhm at 2.4A and 4.5V Vgs.

What is the operating temperature range?

The operating junction and storage temperature range is -55°C to 150°C.

What package type is the SI3900DV-T1-E3 in?

It is supplied in a 6-TSOP (SOT-23-6 Thin) package.

Is the SI3900DV-T1-E3 RoHS compliant?

Yes, it is RoHS3 Compliant.

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