| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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16,020 pcs
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16020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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2,264 pcs
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2264 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
120 pcs
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120 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
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The Vishay Dale SI3865DDV-T1-GE3 is a versatile load switch IC designed for high-side switching applications. It integrates a p-channel MOSFET for load switching and an n-channel MOSFET for level-shifting, enabling control with logic signals as low as 1.8V.
This device operates on supply lines ranging from 1.5V to 12V and can drive loads up to 2.8A. It features low on-resistance (Rds(on)) and adjustable slew-rate control, allowing for tailored rise times to suit different load types. The integrated ESD protection on the input switch enhances reliability.
Packaged in a compact TSOP-6 (SOT-23-6 Thin) surface-mount package, the SI3865DDV-T1-GE3 is suitable for space-constrained portable and consumer devices. Its design simplifies external component requirements, making it an efficient solution for load switching and slew-rate control applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.32 | $0.32 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The input voltage range for the SI3865DDV-T1-GE3 is 1.5 V to 12 V.
The maximum current limit for the SI3865DDV-T1-GE3 is 2.8 A.
The typical on-resistance of the SI3865DDV-T1-GE3 is 0.054 Ohm at an input voltage of 4.5 V.
The SI3865DDV-T1-GE3 operates within a temperature range of -55°C to 150°C.
The SI3865DDV-T1-GE3 is available in a TSOP-6 or SOT-23-6 Thin, TSOT-23-6 package.
The maximum power dissipation for the SI3865DDV-T1-GE3 is 0.83 W.
Yes, the SI3865DDV-T1-GE3 has 2100 V ESD protection on the input switch and VON/OFF pins.