SI3853DV-T1-E3 The Vishay Dale SI3853DV-T1-E3 is a P-Channel MOSFET with a 20V drain-source voltage and 1.6A continuous drain current. It features a low Rds On of 200mOhm at 4.5V gate-source voltage.
Mfr Part #:

SI3853DV-T1-E3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI3853DV-T1-E3 is a P-Channel MOSFET with a 20V drain-source voltage and 1.6A continuous drain current. It features a low Rds On of 200mOhm at 4.5V gate-source voltage.
✓ Total Stock: 2,670 pcs
$ Price Range: $0.99

SI3853DV-T1-E3 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,670 pcs
2670 pcs On Request 1 On Request On Request 0624+ On Request On Request

SI3853DV-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Feature
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI3853DV-T1-E3 Description

Short technical summary and product information.

This Vishay Dale Si3853DV is a P-Channel MOSFET designed for various applications requiring efficient switching. It offers a maximum drain-source voltage of 20V and a continuous drain current of 1.6A at 25°C ambient temperature. The MOSFET exhibits a low on-state resistance (Rds On) of 200mOhm at a gate-source voltage of 4.5V, making it suitable for power management tasks.

 

The device integrates a Schottky diode, providing enhanced performance. It operates within a wide temperature range of -55°C to 150°C. The MOSFET is packaged in a compact SOT-23-6 Thin (TSOT-23-6) surface-mount package, facilitating integration into space-constrained designs. Its thermal resistance characteristics include a junction-to-ambient rating of 110°C/W and a junction-to-foot rating of 90°C/W under steady-state conditions.

 

Compliance includes RoHS3 status. The component is designed for surface mounting and is suitable for applications requiring a reliable P-channel MOSFET with integrated Schottky diode functionality.

SI3853DV-T1-E3 Quick Information

Product Type: MOSFET
Series: LITTLE FOOT Plus
Canonical Name: Vishay Siliconix Si3853DV P-Channel 20-V MOSFET with Schottky Diode
Subcategory: P-Channel

SI3853DV-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI3853DV-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI3853DV-T1-E3 Features

  • P-Channel MOSFET with Schottky Diode
  • 20V Drain-Source Voltage
  • 1.6A Continuous Drain Current
  • 200mOhm Rds On at 4.5V Vgs
  • SOT-23-6 Thin Package

SI3853DV-T1-E3 Applications

  • Used in low-voltage load switching circuits.
  • Suitable for power management in portable devices.
  • Ideal for battery protection and switching applications.
  • Applicable in DC-DC converter output stages.

SI3853DV-T1-E3 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the SI3853DV-T1-E3?

The maximum drain-to-source voltage (Vdss) is 20V.

What is the continuous drain current rating?

The maximum continuous drain current is 1.6A at 25°C ambient temperature.

What is the on-state resistance of this MOSFET?

The maximum on-state resistance is 200mOhm at VGS = -4.5V and ID = -1.8A, and 340mOhm at VGS = -2.5V and ID = -1.0A.

What package does the SI3853DV-T1-E3 come in?

It is available in a SOT-23-6 Thin (TSOT-23-6) package, also designated as 6-TSOP, for surface mount mounting.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Is the SI3853DV-T1-E3 halogen-free?

Yes, it is halogen-free according to IEC 61249-2-21 definition.

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