SI3851DV-T1-E3 The Vishay Dale SI3851DV-T1-E3 is a P-Channel MOSFET with a 30V drain-source voltage and 1.6A continuous current rating. It is supplied in a SOT-23-6 package.
Mfr Part #:

SI3851DV-T1-E3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI3851DV-T1-E3 is a P-Channel MOSFET with a 30V drain-source voltage and 1.6A continuous current rating. It is supplied in a SOT-23-6 package.
✓ Total Stock: 2,990 pcs
$ Price Range: $0.99

SI3851DV-T1-E3 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,990 pcs
2990 pcs On Request 1 On Request On Request 06+ On Request On Request

SI3851DV-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Feature
FET Type
Gate Charge (Qg) (Max) @ Vgs
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI3851DV-T1-E3 Description

Short technical summary and product information.

The Vishay Dale SI3851DV-T1-E3 is a P-Channel MOSFET designed for surface mount applications. It features a maximum drain-source voltage of 30V and a continuous drain current of 1.6A at ambient temperature.

 

Key electrical characteristics include a maximum on-resistance of 200mOhm at 1.8A and 10V, a gate charge of 3.6nC at 5V, and a gate threshold voltage of 1V at 250µA. The device operates within a temperature range of -55°C to 150°C.

 

This MOSFET is housed in a SOT-23-6 Thin or TSOT-23-6 package, suitable for space-constrained designs. It also incorporates an isolated Schottky diode. The power dissipation is rated at a maximum of 830mW at ambient temperature.

SI3851DV-T1-E3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SI3851DV-T1-E3 P-Channel MOSFET
Subcategory: Single

SI3851DV-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI3851DV-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI3851DV-T1-E3 Features

  • P-Channel MOSFET with 30V drain-source voltage.
  • 1.6A continuous drain current rating.
  • Low 200mOhm maximum on-resistance.
  • Surface mount SOT-23-6 package.
  • Operates from -55°C to 150°C.

SI3851DV-T1-E3 Applications

  • Used in power switching circuits.
  • Suitable for load switching applications.
  • Ideal for battery management systems.
  • Applicable in general purpose amplification.

SI3851DV-T1-E3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the SI3851DV-T1-E3?

30V.

What is the package type for this MOSFET?

SOT-23-6 Thin (TSOT-23-6), also known as 6-TSOP.

What is the operating temperature range?

-55°C to 150°C.

What is the continuous drain current rating?

1.6A.

What is the on-resistance?

200 mOhm max at Vgs=10V and Id=1.8A.

What is the gate threshold voltage?

1V max at Id=250µA.

What is the gate charge?

3.6 nC max at Vgs=5V.

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